? 2008 ixys corporation, all rights reserved ds99197f(05/08) v dss = 300v i d25 = 52a r ds(on) 66 m t rr 200 ns n-channel enhancement mode avalanche rated fast intrinsic diode features z international standard packages z fast recovery diode z avalanche rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density symbol test conditions maximum ratings v dss t j = 25c to 150c 300 v v dgr t j = 25c to 150c, r gs = 1m 300 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25c 52 a i dm t c = 25c, pulse width limited by t jm 150 a i a t c = 25c 52 a e as t c = 25c 1 j dv/dt i s i dm , v dd v dss ,t j 150c 10 v/ns p d t c = 25c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. f c mounting force (plus220) 11..65/2.5..14.6 n/lb. weight plus220 & plus220smd 4 g to-247 6 g g = gate d = drain s = source tab = drain IXFV52N30P IXFV52N30Ps ixfh52n30p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 300 v v gs(th) v ds = v gs , i d = 4ma 2.5 5.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss 25 a v gs = 0v t j = 125 c 1 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 66 m polarht tm power mosfet hiperfet tm g s d (tab) plus220smd (ixfv_s) to-247 (ixfh) plus220 (ixfv) g d s d (tab) d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixfh52n30p IXFV52N30P IXFV52N30Ps symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 20 30 s c iss 3490 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 550 pf c rss 130 pf t d(on) 24 ns t r 22 ns t d(off) 60 ns t f 20 ns q g(on) 110 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 25 nc q gd 53 nc r thjc 0.31 c /w r thcs (to-247, plus220) 0.25 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 52 a i sm repetitive, pulse width limited by t jm 150 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 160 200 ns q rm 800 nc i rm 7 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 25a, -di/dt = 100a/ s v r = 100v, v gs = 0v to-247 (ixfh) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p plus220 (ixfv) outline plus220smd (ixfv_s) outline resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 52a r g = 4 (external)
? 2008 ixys corporation, all rights reserved ixfh52n30p IXFV52N30P IXFV52N30Ps fig. 2. extended output characteristics @ 25oc 0 25 50 75 100 125 150 0 4 8 1216202428 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 55 012345678910 v d s - volts i d - amperes v gs = 10v 8v 6v 7v 5v fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on) normalized to i d = 26a v alue vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalized i d = 52 a i d = 26a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to i d = 26a v alue vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 0 25 50 75 100 125 150 i d - amperes r d s (on) - normalized t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfh52n30p IXFV52N30P IXFV52N30Ps fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - pf c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10203040506070809010 0 11 0 12 0 q g - nanocoulombs v g s - volts v ds = 150v i d = 26a i g = 10ma fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 0 102030405060708090100 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. source current vs. source-to-drain voltage 0 20 40 60 80 100 120 140 160 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forward-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 25s 1ms dc r ds (on) limi t t j = 25oc t j = 150oc single pulse 100ms 10ms ixys ref: t_52n30p(6s)3-14-06-c
? 2008 ixys corporation, all rights reserved ixfh52n30p IXFV52N30P IXFV52N30Ps ixys ref: t_52n30p(6s)3-14-06-c fig. 13. maximum transient thermal impedance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds z (th) j c - (oc/w )
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